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  ? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm 8205a dual dual dual dual n-channel n-channel n-channel n-channel 20v, 20v, 20v, 20v, tssop-8 tssop-8 tssop-8 tssop-8 mosfet mosfet mosfet mosfet ? n- n- n- n- ? f f f f eatures eatures eatures eatures c low on-resistance and maximum dc current capability ? ? super high density cell design ??O? r ds(on) < 25 m ? @vgs= 4.5 v r ds(on) < 40 m ? @vgs= 2.5 v applications applications applications applications power management in note book P? ? portable equipment y?O battery powered system ? ?y dc/dc converter ? / ? load switch ?d_P internal internal internal internal schematic schematic schematic schematic diagram diagram diagram diagram ?Y absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings ?? characteristic ? symbol ? max ? unit drain - source voltage ? O - ? O? b v dss 2 0 v gate - source voltage ? O - ? O? v gs + 8 v drain current (continuous) ? O - Bm i d 5.0 a drain current (pulsed) ? O - i dm 20 a total device dissipation ? p tot ( at tc = 25 c ) ( at tc = 70 c ) 2 1.6 w thermal resistance junction - ambient r ja 78 /w thermal resistance junction -case r j c 40 /w junct io n / storage temperature Y / ? t j , t stg -55~150
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm 8205a e e e e lecterical lecterical lecterical lecterical c c c c haracteristics haracteristics haracteristics haracteristics (t a =25 unless otherwise noted of?? 25 ) characteristic ? symbol ? min ? typ ? max ? unit drain - source breakdown voltage ? O - ? O? ( i d = 25 0 u a, v gs =0 v ) b v dss 2 0 v gate threshold voltage ? O _ ? ( i d = 25 0 u a, v gs = v ds ) v gs ( th ) 0.5 1.0 v zero gate voltage drain current ? ? O (v gs = 0 v, v ds = 20 v) i dss 1 u a gate body leakage ? O ? (v gs = + 8 v, v ds = 0 v) i gss + 10 0 n a static drain-source on-state resistance ??? ? ( i d = 7 a, v gs = 4.5 v ) ( i d = 6 a, v gs = 2.5 v ) r ds ( on ) 20 35 25 40 m diode forward voltage drop ? O ( i sd = 1.7 a, v gs =0 v ) v sd 1 . 2 v input capacitance ? (v gs = 0 v, v ds = 10 v, f=1 mhz) c iss 700 pf common source output capacitance ? ? (v gs = 0 v, v ds = 10 v, f=1 mhz) c oss 175 pf reverse transfer capacitance ? (v gs = 0 v, v ds = 10 v, f=1 mhz) c r ss 85 pf gate source charge ? ? ? (v ds = 10 v, i d = 3 a , v gs = 4.5 v ) q gs 1.2 nc gate drain charge ? ? ? (v ds = 10 v, i d = 3 a , v gs = 4.5 v ) q gd 1.9 nc turn-on delay time _ ? rg (v d s = 10 v, i d = 1 a , r gen = 6 , v gs = 4.5 v ) t d (on) 8 ns turn-on rise time _ rg (v d s = 10 v, i d = 1 a , r gen = 6 , v gs = 4.5 v ) t r 10 ns turn-off delay time P ? rg (v d s = 10 v, i d = 1 a , r gen = 6 , v gs = 4.5 v ) t d (off) 18 ns turn-on fall time _ ? rg (v d s = 10 v, i d = 1 a , r gen = 6 , v gs = 4.5 v ) t f 5 ns
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. GM8205A typical typical typical typical characteristic characteristic characteristic characteristic curve curve curve curve
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. GM8205A dimension dimension dimension dimension b?


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